Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 317-319

  Cao, Y ^a   Li, X ^a   Zhang, J ^a   Fay, P ^a   Kosel, T H ^a   Hall, D C ^a  

^a University of Notre Dame   (United States)

Author keywords

FETs; Gallium arsenide; InAlP native oxide; Microwave; MOSFETs; Oxidation

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MICROWAVES; MOS CAPACITORS; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

LEAKAGE CURRENT DENSITY; NATIVE-OXIDE GATE INSULATOR; WET THERMAL OXIDATION;

MOSFET DEVICES;

EID: 33646249130     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.872898     Document Type: Article

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