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Volumn 59, Issue 12, 1999, Pages 8182-8194

Schottky barriers on gaas: screened pinning at defect levels

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EID: 0000399803     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.8182     Document Type: Article
Times cited : (29)

References (102)
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    • P. Omling and L. Samuelson, in Semi-insulating III-V Materials, edited by A. G. Milnes and C. J. Milner (Adam Hilger, Bristol, 1990), p. 17.
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    • N. B. Urli, J. W. Corbett, The Institute of Physics, Bristol, in, edited by, and, p
    • D. V. Lang, in Radiation Effects in Semiconductors, edited by N. B. Urli and J. W. Corbett (The Institute of Physics, Bristol, 1976), Vol. 31, p. 70.
    • (1976) Radiation Effects in Semiconductors , vol.31 , pp. 70
    • Lang, D.V.1
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    • Z.-Q. Fang and D. C. Look, in, edited by J. Michel, T. Kennedy, K. Wada, and K. Thonke (Materials Research Society, Pittsburgh, 1996), 442, p. 405
    • Z.-Q. Fang and D. C. Look, in Defects in Electronic Materials II, edited by J. Michel, T. Kennedy, K. Wada, and K. Thonke (Materials Research Society, Pittsburgh, 1996), Vol. 442, p. 405.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.