On the band structure lineup at interfaces of SiO2, Si 3 N4, and high- κ dielectrics

Applied Physics Letters

Volumn 86, Issue 12, 2005, Pages 1-3

  Mönch, Winfried ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ENERGY GAP; HETEROJUNCTIONS; MATHEMATICAL MODELS; SILICON NITRIDE;

BRANCH-POINT ENERGIES; CONDUCTION-BAND STATES; INTERFACE-INDUCED GAP STATES (IFIGS); WIDE-GAP SEMICONDUCTORS;

SILICA;

EID: 18044376204     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1866641     Document Type: Article

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