SCOPUS 정보 검색 플랫폼

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 272-276

High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

(8) Oktyabrsky, S a Tokranov, V a Yakimov, M a Moore, R a Koveshnikov, S b Tsai, W b Zhu, F c Lee, J C c

a STATE UNIVERSITY OF NEW YORK (United States)

b INTEL CORPORATION (United States)

c The University of Texas at Austin (United States)

Author keywords

Gallium arsenide; Indium arsenide; Metal oxide semiconductor structures; Oxidation; Surface and interface states

Indexed keywords

CAPACITANCE; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE VOLTAGE METHODS; CHANNEL ELECTRON MOBILITY; INTERFACE STATES; METAL-OXIDE-SEMICONDUCTOR STRUCTURES;

DIELECTRIC DEVICES;

EID: 33750687577 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2006.08.018 Document Type: Article

Times cited : (80)

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