Improvement of GaAs metal-semiconductor field-effect transistor drain-source breakdown voltage by oxide surface passivation grown by atomic layer deposition

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 790-794

  Ye, P D ^a,b   Wilk, G D ^c   Yang, B ^b   Chu, S N G ^b   Ng, K K ^b   Bude, J ^b  

^a PURDUE UNIVERSITY   (United States)

^b AGERE SYSTEMS   (United States)

^c ASM AMERICA   (United States)

Author keywords

Atomic layer deposition; Breakdown field; GaAs MESFET

Indexed keywords

ALUMINA; CURRENT DENSITY; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PHENOMENA;

ATOMIC LAYER DEPOSITION (ALD); BREAKDOWN FIELDS; GAAS MESFET; SURFACE PASSIVATION;

MESFET DEVICES;

EID: 14844337913     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.010     Document Type: Conference Paper

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