Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 1027-1030

  Jaouad, A ^a,b   Aimez, V ^a   Aktik, C ^a   Bellatreche, K ^c   Souifi, A ^c  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b FACULTÉ DES SCIENCES BEN M SIK   (Morocco)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; FERMI LEVEL; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; SILICON NITRIDE; ULTRAHIGH VACUUM;

INTERFACE STATES; METAL-INSULATOR-SEMICONDUCTOR (MIS) CAPACITORS; PLASMA FREQUENCY; SURFACE POTENTIAL;

MIS DEVICES;

EID: 3142527189     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1667504     Document Type: Conference Paper

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