Effects of gap states on scanning tunneling spectra observed on (110)- And (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2100-2108

  Hasegawa, Hideki ^a   Negoro, Noboru ^a   Kasai, Seiya ^a   Ishikawa, Yasuhiko ^b   Fujikuwa, Hajime ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 26444473668     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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