High transconductance MISFET with a single InAs nanowire channel

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 682-684

  Do, Q T ^a   Blekker, K ^a   Regolin, I ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

InAs nanowire (NW) field effect transistor (FET); Omega shaped gate; Silicon nitride; Vapor liquid solid (VLS) growth

Indexed keywords

ELECTRIC BREAKDOWN; GATE DIELECTRICS; INDIUM ARSENIDE; NANOWIRES; SILICON NITRIDE; TRANSCONDUCTANCE;

CHANNEL CURRENT; DIELECTRIC SCALING; VAPOR-LIQUID-SOLID GROWTH;

MISFET DEVICES;

EID: 34547779456     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.902082     Document Type: Article

References (9)

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