MBE growth and in situ XPS characterization of silicon interlayers on (1 1 1)B surfaces for passivation of GaAs quantum wire devices

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 951-954

  Akazawa, Masamichi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A1. Surface process; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

MOLECULAR BEAM EPITAXY; NANOELECTRONICS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE CONTROL; SILICON INTERLAYERS; SURFACE PROCESSES; SURFACES PASSIVATION; THIN SOLID FILMS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33947305250     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.065     Document Type: Article

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