Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

Solar Energy

Volumn 80, Issue 6, 2006, Pages 629-644

  Hasegawa, Hideki ^a   Sato, Taketomo ^a   Kasai, Seiya ^a   Adamowicz, Boguslawa ^b   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Capacitance voltage method; Fermi level pinning; Nano structures; Surface recombination; Surface states; Tunneling spectroscopy

Indexed keywords

CAPACITANCE; CATHODOLUMINESCENCE; COMPUTER SIMULATION; FERMI LEVEL; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SPECTROSCOPIC ANALYSIS;

CAPACITANCE VOLTAGE METHOD; FERMI LEVEL PINNING; SURFACE RECOMBINATION; SURFACE STATES; TUNNELING SPECTROSCOPY;

SEMICONDUCTOR MATERIALS;

CAPACITANCE; CATHODOLUMINESCENCE; COMPUTER SIMULATION; FERMI LEVEL; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS;

LIGHT INTENSITY; PHOTOVOLTAIC SYSTEM; SILICON; VANADIUM; VELOCITY;

EID: 33646858123     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2005.10.014     Document Type: Article

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