Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 87, Issue 9, 2005, Pages

  Noborisaka, J ^a   Motohisa, J ^a   Hara, S ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORE-SHELL STRUCTURES; GROWTH TIME; NANOWIRES; PREFERENTIAL ETCHING;

ANISOTROPY; CHARACTERIZATION; ETCHING; FABRICATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; VAPOR PHASE EPITAXY;

NANOTUBES;

EID: 24644510420     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2035332     Document Type: Article

References (19)

1. L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, Nature (London) 420, 57 (2002).
2. B. J. Ohlsson, M. T. Bjork, M. H. Magnusson, K. Deppert, and L. Samuelson, Appl. Phys. Lett. 79, 3335 (2001).
3. Y. Watanabe, S. Bhunia, S. Fujikawa, T. Kawamura, H. Nakashima, K. Furukawa, and K. Torimitsu, Thin Solid Films 464-465, 248 (2004).
4. P. Yang, H. Yan, S. Mao, R. Russo, J. Johnshon, R. Saykally, N. Morris, J. Pham, R. He, and H. Choi, Adv. Funct. Mater. 5, 323 (2002).
5. C. Thelander, T. Martensson, M. T. Bjork, B. J. Ohlsson, M. W. Larsson, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 83, 2052 (2003).
6. X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, Nature (London) 421, 241 (2003).
7. D. Zhang, C. Li, X. Liu, S. Han, T. Tang, and C. Zhou, Appl. Phys. Lett. 83, 1845 (2003).
8. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
9. K. Hiruma, M. Yazawa, T. Katsuyama, K. Ogawa, K. Haraguchi, M. Koguchi, and H. Kakibayashi, J. Appl. Phys. 77, 447 (1995).
10. M. T. Bjork, B. J. Ohlsson, T. Sass, A. I. Persson, C. Thelander, M. H. Magunusson, K. Deppert, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 80, 1058 (2002).
11. L. Samuelson, M. T. Bjork, K. Deppert, M. Larsson, B. J. Ohlsson, N. Panev, A. I. Persson, N. Skold, C. Thelander, and L. R. Wallenberg, Physica E (Amsterdam) 21, 560 (2004).
12. J. Motohisa, J. Takeda, M. Inari, J. Noborisaka, and T. Fukui, Physica E (Amsterdam) 23, 298 (2004).
13. J. Motohisa, J. Noborisaka, J. Takeda, M. Inari, and T. Fukui, J. Cryst. Growth 272, 180 (2004).
14. J. Noborisaka, J. Motohisa, and T. Fukui, Appl. Phys. Lett. 86, 213102 (2005).
15. S. Ando, S. S. Chan, and T. Fukui, J. Cryst. Growth 115, 69 (1991).
16. S. Kodama, S. Koyanagi, T. Hashizume, and H. Hasegawa, J. Vac. Sci. Technol. B 13, 1794 (1995).
17. J. M. Moison, K. Elcess, F. Houzay, J. Y. Marzin, J. M. Gerard, F. Barthe, and M. Bensoussan, Phys. Rev. B 41, 12945 (1990).
18. H. W. Seo, S. Y. Bae, and J. Park, J. Chem. Phys. 116, 9492 (2002).
19. T. Kitano, S. Izumi, H. Minami, T. Ishikawa, K. Sato, T. Sonoda, and M. Otsubo, J. Vac. Sci. Technol. B 15, 167 (1996).