Effects of Si deposition on the properties of Ga-rich (4×6) GaAs (001) surfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1945-1952

  Negoro, Noboru ^a   Anantathanasarn, Sanguan ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FERMI LEVEL; IRRADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOSFET DEVICES; PASSIVATION; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM;

SURFACE PASSIVATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0141569648     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1585075     Document Type: Conference Paper

References (33)

1. M. D. Pashley, K. W. Haberern, and R. M. Feenstra, J. Vac. Sci. Technol. B 10, 1874 (1992)
2. Y. Ishikawa, T. Fukui, and H. Hasegawa, J. Vac. Sci. Technol. B 15, 1163 (1997).
3. V. Bressler-Hill, M. Wassermeier, K. Pond, R. Maboudian, G. A. D. Briggs, P. M. Petroff, and W. H. Weinberg, J. Vac. Sci. Technol. B 10, 1881 (1992).
4. T. Takahashi and M. Yoshita, Appl. Phys. Lett. 70, 2162 (1997).
5. H. Hasegawa, N. Negoro, S. Kasai, Y. Ishikawa, and H. Fujikura, J. Vac. Sci. Technol. B 18, 2100 (2000).
6. N. Negoro, S. Kasai, and H. Hasegawa, Appl. Surf. Sci. 190, 269 (2002).
7. B. J. Skromme, C. J. Sandroff, E. Yablonovitch, and T. Gmitter, Appl. Phys. Lett. 51, 2022 (1987).
8. H. Hasegawa, H. Ishii, T. Sawada, T. Saitoh, S. Konishi, Y. Liu, and H. Ohno, J. Vac. Sci. Technol. B 6, 1184 (1988).
9. J. Fan, Y. Kurata, and Y. Nannichi, Jpn. J. Appl. Phys., Part 2 28, L2255 (1989).
10. Y. Wada and K. Wada, J. Vac. Sci. Technol. B 12, 3084 (1994).
11. M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science 283, 1897 (1999).
12. H. Hasegawa, M. Akazawa, H. Ishii, and K. Matsuzaki, J. Vac. Sci. Technol. B 7, 870 (1989).
13. S. Tiwari, S. L. Wright, and J. Batey, IEEE Electron Device Lett. 9, 488 (1988).
14. A. Callegari, D. K. Sadana, D. A. Buchanan, A. Paccagnella, E. D. Marshall, M. A. Tischler, and M. Norcott, Appl. Phys. Lett. 58, 2540 (1991).
15. D. S. L. Mui, D. Biswas, J. Reed, A. L. Demirel, S. Strite, and H. Morkoc, Appl. Phys. Lett. 60, 2511 (1992).
16. D. S. L. Mui, J. Reed, D. Biswas, and H. Morkoc, J. Appl. Phys. 72, 553 (1992).
17. J. Reed, Z. Fan, G. B. Gao, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 64, 2706 (1994).
18. H. Hasegawa, Thin Solid Films 367, 58 (2000).
19. Y. G. Xie, S. Kasai, H. Takahashi, C. Jiang, and H. Hasegawa, IEEE Electron Device Lett. 22, 312 (2001).
20. M. Mutoh, N. Tsurumi, and H. Hasegawa, Jpn. J. Appl. Phys., Part 1 38, 2538 (1999).
21. Y. Nakano, N. Negoro, and H. Hasegawa, Jpn. J. Appl. Phys., Part 1 41, 2542 (2002).
22. Q. K. Xue, T. Hashizume, A. Ichimiya, T. Ohno, Y. Hasegawa, and T. Sakurai, Sci. Rep. Res. Inst. Tohoku Univ. A 44, 113 (1997).
23. N. Tsurumi, Y. Ishikawa, T. Fukui, and H. Hasegawa, Jpn. J. Appl. Phys., Part 1 37, 1501 (1998).
24. P. Mårtensson and R. M. Feenstta, Phys. Rev. B 39, 7744 (1989).
25. H. Takahashi, T. Yoshida, M. Mutoh, T. Sakai, and H. Hasegawa, Solid-State Electron. 43, 1561 (1999).
26. D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L.-E. Swartz, Phys. Rev. B 41, 5701 (1990).
27. D. E. Aspnes, Surf. Sci. 132, 406 (1983).
28. B. Adamowicz and H. Hasegawa, Jpn. J. Appl. Phys., Part 1 37, 1631 (1998).
29. T. Saitoh, H. Iwadate, and H. Hasegawa, Jpn. J. Appl. Phys., Part 1 30, 3750 (1991).
30. H. Hasegawa and H. Ohno, J. Vac. Sci. Technol. B 4, 1130 (1986).
31. D. J. Chadi, J. Vac. Sci. Technol. A 5, 834 (1987).
32. J. R. Arthur, Surf. Sci. 43, 449 (1974).
33. K. Shiraishi, H. Tamura, and H. Takayanagi, Appl. Phys. Lett. 78, 3702 (2001).