Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1714-1721

  Shiozaki, Nanako ^a   Sato, Taketomo ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PASSIVATION; PHOTOLUMINESCENCE; REDUCTION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE TREATMENT;

INTERLAYERS; SURFACE PASSIVATION; SURFACE STATES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 28144443324     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1943446     Document Type: Article

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