Control of interface states at metal/6H-SiC(0001) interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 3, 2004, Pages

  Teraji, Tokuyuki ^a,b   Hara, Shiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOT WATER; HYDROGEN; OXYGEN; SILICON DERIVATIVE; TITANIUM;

ARTICLE; ATOM; CONDUCTANCE; DENSITY; ELECTRICITY; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; FLAME PHOTOMETRY; HEIGHT; HIGH TEMPERATURE; IMMERSION; MATHEMATICAL COMPUTING; OXIDATION; ROENTGEN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 26444437471     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.035312     Document Type: Article

References (83)

1. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988).
2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
3. m) is 2.27.
4. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 22, 1433 (1969).
5. B. L. Sharma and S. C. Gupta, Solid State Technol. 23, 97 (1980); and 23, 900 (1980).
6. B. L. Sharma and S. C. Gupta, Solid State Technol. 23, 97 (1980); and 23, 900 (1980).
7. M. S. Tyagi, in Metal-Semiconductor Schottky Barrier Junctions and Their Applications, edited by B. L. Sharma (Plenum, New York, 1984), Chap. 1.
8. V. Heine, Phys. Rev. 138, A1689 (1965).
9. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
10. S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, Phys. Rev. B 15, 2154 (1977).
11. To know how to understand MIGS models and experimental works, see a review paper of R. T. Tung, Mater. Sci. Eng. R 35, 1 (2001).
12. R. T. Tung, Phys. Rev. Lett. 52, 461 (1984).
13. G. Le Lay, V. Yu Aristov, K. Hricovini, A. Taleb-Ibrahimi, P. Dumas, R. Gunther, J. Osvald, and G. Indlekofer, in Control of Semiconductor Interfaces, Proceedings of the Ist International Symposium on Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima, and A. Hiraki (Elsevier, Amsterdam, 1994), p. 39.
14. J. F. Fan, H. Oigawa, and Y. Nannichi, Jpn. J. Appl. Phys. 27, L2125 (1988).
15. S. Chang, L. J. Brillson, Y. J. Kime, D. Rioux, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, Phys. Rev. Lett. 64, 2551 (1990); R. E. Viturro, S. Chang, J. L. Shaw, C. Mailhiot, L. J. Brillson, A. Terrasi, Y. Hwu, G. Margaritondo, P. D. Kirchner, and J. M. Woodall, J. Vac. Sci. Technol. B 7, 1007 (1989).
16. S. Chang, L. J. Brillson, Y. J. Kime, D. Rioux, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, Phys. Rev. Lett. 64, 2551 (1990); R. E. Viturro, S. Chang, J. L. Shaw, C. Mailhiot, L. J. Brillson, A. Terrasi, Y. Hwu, G. Margaritondo, P. D. Kirchner, and J. M. Woodall, J. Vac. Sci. Technol. B 7, 1007 (1989).
17. K. Shenai, R. S. Scott, and B. J. Baliga, IEEE Trans. Electron Devices 36, 1811 (1989).
18. Advances on the SiC studies until the mid-1990's has been published as the issues of review articles as Special issue on fundamental questions and application of SiC (Part I), edited by W. J. Choyke, H. Matsunami, and G. Pensl, Phys. Status Solidi B 202, 1 (1997); ibid. (Part II), Phys. Status Solidi A 162, 1 (1997).
19. Advances on the SiC studies until the mid-1990's has been published as the issues of review articles as Special issue on fundamental questions and application of SiC (Part I), edited by W. J. Choyke, H. Matsunami, and G. Pensl, Phys. Status Solidi B 202, 1 (1997); ibid. (Part II), Phys. Status Solidi A 162, 1 (1997).
20. J. R. Waldrop, R. W. Grant, Y. C. Wang, and R. F. Davis, J. Appl. Phys. 72, 4757 (1992).
21. J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. 62, 2685 (1993).
22. L. M. Porter, R. F. Davis, J. S. Bow, M. J. Kim, and R. W. Carpenter, J. Mater. Res. 10, 26 (1995).
23. L. M. Porter, R. F. Davis, J. S. Bow, M. J. Kim, R. W. Carpenter, and R. C. Glass, J. Mater. Res. 10, 668 (1995).
24. L. M. Porter, R. F. Davis, J. S. Bow, M. J. Kim, and R. W. Carpenter, J. Mater. Res. 10, 2336 (1995).
25. L. M. Porter and R. F. Davis, Mater. Sci. Eng., B 34, 83 (1995).
26. W. Kern and D. A. Puotinen, RCA Rev. 31, 187 (1970).
27. U. Starke, Ch. Bram, P.-R. Steiner, W. Hartner, L. Hammer, K. Heinz, and K. Müller, Appl. Surf. Sci. 89, 175 (1995).
28. S. Watanabe, M. Shigeno, N. Nakayama, and T. Ito, Jpn. J. Appl. Phys. 30, 3575 (1991).
29. S. Watanabe and Y. Sugita, Surf. Sci. 327, 1 (1995).
30. H. A. Bethe, MIT Radiat. Lab. Rep. 43-12, (1942).
31. L. Patrick and W. J. Choyke, Phys. Rev. B 2, 2255 (1970).
32. T. E. Tiwald, J. A. Woollam, S. Zollner, J. Christiansen, R. B. Gregory, T. Wetteroth, S. R. Wilson, and A. R. Powell, Phys. Rev. B 60, 11464 (1999).
33. M. Schadt, G. Pensl, R. P. Devaty, W. J. Choyke, R. Stein, and D. Stephani, Appl. Phys. Lett. 65, 3120 (1994).
34. W. Suttrop, G. Pensl, W. J. Choyke, R. Stein, and S. Leibenzeder, J. Appl. Phys. 72, 3708 (1992).
35. D. E. Eastman, Phys. Rev. B 2, 1 (1970); R. M. Eastment and C. H. B. Mee, J. Phys. F: Met. Phys. 3, 1738 (1973); D. M. Collins, J. B. Lee, and W. E. Spicer, Surf. Sci. 55, 389 (1976), R. M. Eastment and C. H. B. Mee, J. Phys. F: Met. Phys. 3, 1738 (1973).
36. D. E. Eastman, Phys. Rev. B 2, 1 (1970); R. M. Eastment and C. H. B. Mee, J. Phys. F: Met. Phys. 3, 1738 (1973); D. M. Collins, J. B. Lee, and W. E. Spicer, Surf. Sci. 55, 389 (1976), R. M. Eastment and C. H. B. Mee, J. Phys. F: Met. Phys. 3, 1738 (1973).
37. D. E. Eastman, Phys. Rev. B 2, 1 (1970); R. M. Eastment and C. H. B. Mee, J. Phys. F: Met. Phys. 3, 1738 (1973); D. M. Collins, J. B. Lee, and W. E. Spicer, Surf. Sci. 55, 389 (1976), R. M. Eastment and C. H. B. Mee, J. Phys. F: Met. Phys. 3, 1738 (1973).
38. D. E. Eastman, Phys. Rev. B 2, 1 (1970); R. M. Eastment and C. H. B. Mee, J. Phys. F: Met. Phys. 3, 1738 (1973); D. M. Collins, J. B. Lee, and W. E. Spicer, Surf. Sci. 55, 389 (1976), R. M. Eastment and C. H. B. Mee, J. Phys. F: Met. Phys. 3, 1738 (1973).
39. I. Ohdomari, T. S. Kuan, and K. N. Tu, J. Appl. Phys. 50, 7020 (1979).
40. R. F. Schmitsdorf, T. U. Kampen, and W. Mönch, Surf. Sci. 324, 249 (1995); W. Mönch, J. Vac. Sci. Technol. B 17, 1867 (1999).
41. R. F. Schmitsdorf, T. U. Kampen, and W. Mönch, Surf. Sci. 324, 249 (1995); W. Mönch, J. Vac. Sci. Technol. B 17, 1867 (1999).
42. D. Defives, O. Noblanc, C. Dua, C. Brylinski, M. Barthula, V. Aubry-Fortuna, and F. Meyer, IEEE Trans. Electron Devices 46, 449 (1999).
43. I. Ohdomari and H. Aochi, Phys. Rev. B 35, 682 (1987).
44. R. T. Tung, Phys. Rev. B 45, 13509 (1992).
45. T. Teraji, S. Hara, H. Okushi, and K. Kajimura, Mater. Res. Soc. Symp. Proc. 423, 149 (1996).
46. T. Teraji, S. Hara, H. Okushi, and K. Kajimura, Appl. Phys. Lett. 71, 689 (1997).
47. A. M. Cowley and S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
48. O. Madelung, Semiconductors-Basic Data, 2nd ed. (Springer-Verlag, Berlin, 1996).
49. S. Yoshida, K. Sasaki, E. Sakuma, S. Misawa, and S. Gonda, Appl. Phys. Lett. 46, 766 (1985).
50. S. Hara, T Teraji, H. Okushi, and K. Kajimura, Appl. Surf. Sci. 117/118, 394 (1997).
51. S. Hara, T. Teraji, H. Okushi, and K. Kajimura, Mater. Res. Soc. Symp. Proc. 427, 159 (1996).
52. V. V. Afanas'ev, M. Bassler, G. Pensl, M. J. Schulz, and E. Stein von Kamienski, J. Appl. Phys. 79, 3108 (1996).
53. R. Williams, Phys. Rev. A 140, 569 (1965).
54. J. Pelletier, D. Gervais, and C. Pomot, J. Appl. Phys. 55, 994 (1984).
55. W. Mönch, Semiconductor Surfaces and Interfaces, 2nd ed. (Springer-Verlag, Berlin, 1995).
56. S. Hara, Surf. Sci. 494, L805 (2001).
57. H. W. Yeom, I. Matsuda, Y.-C. Chao, S. Hara, S. Yoshida, and R. I. G. Uhrberg, Phys. Rev. B 61, R2417 (2000).
58. S. W. King, R. J. Nemanich, and R. F. Davis, J. Electrochem. Soc. 146, 1910 (1999).
59. L. E. Davis, N. C. MacDonald, P. W. Palmberg, G. E. Riach, and R. E. Weber, Handbook of Auger Electron Spectroscopy (Physical Electronics Industries, Eden Prairie, Minnesota, 1976).
60. V. van Elsbergen, T. U. Kampen, and W. Mönch, Surf. Sci. 365, 443 (1996).
61. V. van Elsbergen, O. Janzen, and W. Mönch, Mater. Sci. Eng. B 46, 366 (1997).
62. K. Oura and T. Hanawa, Surf. Sci. 82, 202 (1979).
63. R. Kaplan, Surf. Sci. 215, 111 (1989).
64. V. M. Bermudez, Appl. Surf. Sci. 84, 45 (1995).
65. L. I. Johansson, F. Owman, and P. Mårtensson, Surf. Sci. 360, L478 (1996).
66. V. Ramachandran and R. M. Feenstra, Phys. Rev. Lett. 82, 1000 (1999).
67. J. Furthmüller, F. Bechstedt, H. Hüsken, B. Schröter, and W. Richter, Phys. Rev. B 58, 13712 (1998).
68. U. Starke, J. Schardt, J. Bernhardt, M. Franke, K. Reuter, H. Wedler, K. Heinz, J. Furthmüller, P. Käckell, and F. Bechstedt, Phys. Rev. Lett. 80, 758 (1998).
69. J. E. Northrup and J. Neugebauer, Phys. Rev. B 52, R17001 (1995).
70. S. Hara, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma, and S. Yoshida, Surf. Sci. Lett. 278, L141 (1992).
71. L. I. Johansson, F. Owrnan, and P. Mårtensson, Phys. Rev. B 53, 13793 (1996).
72. F. Owman and P. Mårtensson, Surf. Sci. 330, L639 (1995).
73. S. Tanaka, R. S. Kern, R. F. Davis, J. E Wendelken, and J. Xu, Surf. Sci. 350, 247 (1996).
74. T. Ueda, H. Nishino, and H. Matsunami, J. Cryst. Growth 104, 695 (1990).
75. J. Bardeen, Phys. Rev. 71, 717 (1947).
76. H. Tsuchida, I. Kamata, and K. Izumi, Appl. Phys. Lett. 70, 3072 (1997).
77. H. R. Philipp and E. A. Taft, Silicon Carbide - A High Temperature Semiconductor, edited by J. R. O'Connor and J. Smiltens (Pergamon, Oxford, 1960), p. 366.
78. Y. Sugawara, N. Shibata, S. Hara, and Y. Ikuhara, J. Mater. Res. 15, 2121 (2000).
79. A. A. Saleh, V. Shutthanandan, and R. J. Smith, Phys. Rev. B 49, 4908 (1994).
80. A. A. Saleh, V. Shutthanandan, N. R. Shivaparan, and R. J. Smith, Phys. Rev. B 56, 9841 (1997).
81. 0. In this condition, the acceptor-like states are empty and the donor-like states are filled. Thus, both the states are uncharged and electrically neutral, which is the reason this level is called CNL. Note that interface charges from the metal side and the bulk ion charges from impurities fixed in the semiconductor due to a band bending as well as the charges from the two type of interface states should be counted when the total charge condition is considered.
82. H. Hasegawa and H. Ohno, J. Vac. Sci. Technol. B 4, 1130 (1986).
83. R. T. Tung, Phys. Rev. Lett. 52, 461 (1984).