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Volumn 1998, Issue 2, 1998, Pages 93-110

Some unsolved problems associated with designing of nitride lasers

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EID: 3242758864     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (120)
  • 4
    • 0030128573 scopus 로고    scopus 로고
    • Continuous-wave operation of a blue vertical-cavity surface-emitting laser based on second-harmonic generation
    • N. Yamada, Y. Kaneko, S. Nakagawa, and D. E. Mars: Continuous-wave operation of a blue vertical-cavity surface-emitting laser based on second-harmonic generation. Appl. Phys. Lett. 68 (1996) 1895.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 1895
    • Yamada, N.1    Kaneko, Y.2    Nakagawa, S.3    Mars, D.E.4
  • 7
    • 84876613120 scopus 로고
    • Blue-light-emitting diode delivers 1 cd; in 1994, so will semiconductor lasers
    • 3 Jan.
    • T. Nakamori: Blue-light-emitting diode delivers 1 cd; In 1994, so will semiconductor lasers. Nikkei Electronics, No 568 (3 Jan. 1994).
    • (1994) Nikkei Electronics , vol.568
    • Nakamori, T.1
  • 12
    • 0343367300 scopus 로고    scopus 로고
    • Characteristics of room temperature CW operated InGaN multi-quantum-well-structure laser diodes
    • Article 5
    • S. Nakamura: Characteristics of room temperature CW operated InGaN multi-quantum-well-structure laser diodes. MRS Internet J. Nitride Semicond. Res. 2 (1997) Article 5.
    • (1997) MRS Internet J. Nitride Semicond. Res. , vol.2
    • Nakamura, S.1
  • 15
    • 3242811395 scopus 로고    scopus 로고
    • Nichia predicts 1998 release for violet laser diode
    • C. Whipple: Nichia predicts 1998 release for violet laser diode. Photonics Spectra 32(1) (1998) 30.
    • (1998) Photonics Spectra , vol.32 , Issue.1 , pp. 30
    • Whipple, C.1
  • 16
    • 84876642524 scopus 로고    scopus 로고
    • Diode lasers: Researchers seek the elusive, blue/green spectrum
    • D. Bour: Diode lasers: Researchers seek the elusive, blue/green spectrum. Photonics Spectra 32(1) (1998) 93.
    • (1998) Photonics Spectra , vol.32 , Issue.1 , pp. 93
    • Bour, D.1
  • 20
    • 0031365062 scopus 로고    scopus 로고
    • Gain processes in blue-light-emitting quantum structures: The role of excitons and bi-excitons
    • H.-J. Wünsche, S. Renisch, and F. Henneberger: Gain processes in blue-light-emitting quantum structures: The role of excitons and bi-excitons. Proc. SPIE 2994 (1997) 102.
    • (1997) Proc. SPIE , vol.2994 , pp. 102
    • Wünsche, H.-J.1    Renisch, S.2    Henneberger, F.3
  • 21
    • 0031551651 scopus 로고    scopus 로고
    • Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
    • J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B. P. Kelly, U. K. Mishra, and S. P. DenBaars: Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements. Appl. Phys. Lett. 71 (1997) 2572.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 2572
    • Muth, J.F.1    Lee, J.H.2    Shmagin, I.K.3    Kolbas, R.M.4    Casey Jr., H.C.5    Kelly, B.P.6    Mishra, U.K.7    DenBaars, S.P.8
  • 23
    • 5944246702 scopus 로고
    • Absorption, reflectance, and luminescence of GaN epitaxial layers
    • R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems: Absorption, reflectance, and luminescence of GaN epitaxial layers. Phys. Rev. B4 (1971) 1211.
    • (1971) Phys. Rev. , vol.B4 , pp. 1211
    • Dingle, R.1    Sell, D.D.2    Stokowski, S.E.3    Ilegems, M.4
  • 25
    • 16444375543 scopus 로고
    • Intensity of optical absorption by excitons
    • R. J. Elliott: Intensity of optical absorption by excitons. Phys. Rev. 108 (1957) 1384.
    • (1957) Phys. Rev. , vol.108 , pp. 1384
    • Elliott, R.J.1
  • 27
    • 0000300543 scopus 로고    scopus 로고
    • On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy
    • W. Kim, A. E. Botchkarev, A. Salvador, G. Popovici, H. Tang, and H. Morkoç: On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy. J. Appl. Phys. 82 (1997) 219.
    • (1997) J. Appl. Phys. , vol.82 , pp. 219
    • Kim, W.1    Botchkarev, A.E.2    Salvador, A.3    Popovici, G.4    Tang, H.5    Morkoç, H.6
  • 28
    • 0001841410 scopus 로고    scopus 로고
    • Exciton density dependence of photoluminescence in GaN:Mg
    • E. Oh, H. Park, and Y. Park: Exciton density dependence of photoluminescence in GaN:Mg. Appl. Phys. Lett. 71 (1998) 70.
    • (1998) Appl. Phys. Lett. , vol.71 , pp. 70
    • Oh, E.1    Park, H.2    Park, Y.3
  • 32
    • 0031333502 scopus 로고    scopus 로고
    • Prediction of low threshold current density in InGaN-AlGaN quantum wire lasers due to excitonic transitions
    • W. Huang and F. Jain: Prediction of low threshold current density in InGaN-AlGaN quantum wire lasers due to excitonic transitions. Proc. SPIE 2994 (1997) 141.
    • (1997) Proc. SPIE , vol.2994 , pp. 141
    • Huang, W.1    Jain, F.2
  • 33
    • 0000963229 scopus 로고    scopus 로고
    • Influence of potential fluctuations on optical and electrical properties in GaN
    • E: Oh, H. Park, and Y. Park: Influence of potential fluctuations on optical and electrical properties in GaN. Appl. Phys. Lett. 72 (1998) 1848.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1848
    • Oh, E.1    Park, H.2    Park, Y.3
  • 35
    • 0347382992 scopus 로고    scopus 로고
    • Spontaneous emission of localized excitons in InGaN single quantum well structures
    • S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura: Spontaneous emission of localized excitons in InGaN single quantum well structures. Appl. Phys. Lett. 69 (1996) 4188.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 4188
    • Chichibu, S.1    Azuhata, T.2    Sota, T.3    Nakamura, S.4
  • 36
    • 0344975184 scopus 로고    scopus 로고
    • Role of self-formed InGaN quantum dots for the exciton localization in the purple laser diodes emitting at 420 nm
    • Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, and S. Nakamura: Role of self-formed InGaN quantum dots for the exciton localization in the purple laser diodes emitting at 420 nm. Appl. Phys. Lett. 70 (1997) 981.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 981
    • Narukawa, Y.1    Kawakami, Y.2    Funato, M.3    Fujita, S.4    Fujita, S.5    Nakamura, S.6
  • 37
    • 0026244249 scopus 로고
    • GaN growth using GaN buffer layer
    • S. Nakamura: GaN growth using GaN buffer layer. Jpn. J. Appl. Phys. 30 (1991) L1705.
    • (1991) Jpn. J. Appl. Phys. , vol.30
    • Nakamura, S.1
  • 41
  • 43
    • 0001244452 scopus 로고    scopus 로고
    • Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes
    • H. C. Casey, Jr., J. Muth, S. Krishnankutty, and J. M. Zavada: Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes. Appl. Phys. Lett. 68 (1996) 2867.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2867
    • Casey Jr., H.C.1    Muth, J.2    Krishnankutty, S.3    Zavada, J.M.4
  • 44
    • 0031552824 scopus 로고    scopus 로고
    • Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions
    • M. Smith, J. Y. Lin, H. X. Jiang, and M. A. Khan: Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions. Appl. Phys. Lett. 71 (1997) 635.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 635
    • Smith, M.1    Lin, J.Y.2    Jiang, H.X.3    Khan, M.A.4
  • 47
    • 0000482352 scopus 로고    scopus 로고
    • Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
    • K. Domen, A. Kuramata, and T. Tanahashi: Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode. Appl. Phys. Lett. 72 (1998) 1359.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1359
    • Domen, K.1    Kuramata, A.2    Tanahashi, T.3
  • 48
    • 0014595810 scopus 로고
    • The preparation and properties of vapor-deposited single-crystalline GaN
    • H. P. Maruska and J. J. Tietjen: The preparation and properties of vapor-deposited single-crystalline GaN. Appl. Phys. Lett. 15 (1969) 327.
    • (1969) Appl. Phys. Lett. , vol.15 , pp. 327
    • Maruska, H.P.1    Tietjen, J.J.2
  • 51
    • 0000218044 scopus 로고    scopus 로고
    • Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate
    • D.-S. Jiang, M. Ramsteiner, K. H. Ploog, H. Tews, A. Graber, R. Averbeck, and H. Riechert: Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate. Appl. Phys. Lett. 72 (1998) 365.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 365
    • Jiang, D.-S.1    Ramsteiner, M.2    Ploog, K.H.3    Tews, H.4    Graber, A.5    Averbeck, R.6    Riechert, H.7
  • 57
    • 36449007113 scopus 로고    scopus 로고
    • Amphoteric properties of substitutional carbon impurity in GaN and AlN
    • P. Boguslawski, E. L. Briggs, and J. Bernholc: Amphoteric properties of substitutional carbon impurity in GaN and AlN. Appl. Phys. Lett. 69 (1996) 233.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 233
    • Boguslawski, P.1    Briggs, E.L.2    Bernholc, J.3
  • 58
    • 0000873763 scopus 로고    scopus 로고
    • Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition
    • X. Zhang, S.-J. Chua, W. Liu, and K.-B. Chong: Photoreflectance study of Si-doped GaN grown by metal-organic chemical vapor deposition. Appl. Phys. Lett. 72 (1998) 1890.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1890
    • Zhang, X.1    Chua, S.-J.2    Liu, W.3    Chong, K.-B.4
  • 59
    • 0001429637 scopus 로고    scopus 로고
    • Theory of doping and defects in III-V nitrides
    • paper W1-1
    • C. G. Van de Walle, C. Stampfl, and J. Neugebauer: Theory of doping and defects in III-V nitrides. ICNS'97 (1997) paper W1-1, 386.
    • (1997) ICNS'97 , pp. 386
    • Van De Walle, C.G.1    Stampfl, C.2    Neugebauer, J.3
  • 60
    • 84883188181 scopus 로고
    • P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
    • H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki: P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn. J. Appl. Phys. 28 (1989) L2112.
    • (1989) Jpn. J. Appl. Phys. , vol.28
    • Amano, H.1    Kito, M.2    Hiramatsu, K.3    Akasaki, I.4
  • 63
    • 0001575626 scopus 로고    scopus 로고
    • The activation of Mg in GaN by annealing with minority-carrier injection
    • M. Miyachi, T. Tanaka, Y. Kimura, and H. Ota: The activation of Mg in GaN by annealing with minority-carrier injection. Appl. Phys. Lett. 72 (1998) 1101.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1101
    • Miyachi, M.1    Tanaka, T.2    Kimura, Y.3    Ota, H.4
  • 64
    • 0000869373 scopus 로고    scopus 로고
    • Interactions of hydrogen with native defects in GaN
    • C. G. Van de Walle: Interactions of hydrogen with native defects in GaN. Phys. Rev. B56 (1997) R10020.
    • (1997) Phys. Rev. , vol.B56
    • Van De Walle, C.G.1
  • 69
    • 0001017512 scopus 로고    scopus 로고
    • P-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition
    • L. Sugiura, M. Suzuki, and J. Nishio: P-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 72 (1998) 1748.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1748
    • Sugiura, L.1    Suzuki, M.2    Nishio, J.3
  • 70
    • 5544310194 scopus 로고
    • Electrical properties of n-type vapor-grown gallium nitride
    • M. Ilegems and H. C. Montgomery: Electrical properties of n-type vapor-grown gallium nitride. J. Phys. Chem. Solids 34 (1973) 885.
    • (1973) J. Phys. Chem. Solids , vol.34 , pp. 885
    • Ilegems, M.1    Montgomery, H.C.2
  • 72
    • 0000596029 scopus 로고    scopus 로고
    • Theoretical evidence for efficient p-type doping of GaN using beryllium
    • F. Bernardini, V. Fiorentini, and A. Bosin: Theoretical evidence for efficient p-type doping of GaN using beryllium. Appl. Phys. Lett. 70 (1997) 2990.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 2990
    • Bernardini, F.1    Fiorentini, V.2    Bosin, A.3
  • 76
    • 0029637531 scopus 로고
    • High dislocation densities in high efficiency GaN-based light-emitting diodes
    • S. D. Lester, F. A. Ponce, M. G. Crawford, and D. A. Steigerwald: High dislocation densities in high efficiency GaN-based light-emitting diodes. Appl. Phys. Lett. 66 (1995) 1249.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 1249
    • Lester, S.D.1    Ponce, F.A.2    Crawford, M.G.3    Steigerwald, D.A.4
  • 77
    • 0003610689 scopus 로고    scopus 로고
    • Dislocation motion in GaN light-emitting devices and its effect on device lifetime
    • L. Sugiura: Dislocation motion in GaN light-emitting devices and its effect on device lifetime. J. Appl. Phys. 81 (1997) 1633.
    • (1997) J. Appl. Phys. , vol.81 , pp. 1633
    • Sugiura, L.1
  • 78
    • 0000619448 scopus 로고    scopus 로고
    • Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices
    • L. Sugiura: Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices. Appl. Phys. Lett. 70 (1997) 1317.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 1317
    • Sugiura, L.1
  • 80
  • 82
    • 0031588273 scopus 로고    scopus 로고
    • Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
    • T. S. Zheleva, O.-K. Nam, M. D. Bremser, and R F. Davis: Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. Appl Phys. Lett. 71 (1997) 2472.
    • (1997) Appl Phys. Lett. , vol.71 , pp. 2472
    • Zheleva, T.S.1    Nam, O.-K.2    Bremser, M.D.3    Davis, R.F.4
  • 84
    • 0001681080 scopus 로고    scopus 로고
    • Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
    • B. Beaumont, S. Haffouz, and P. Gibart: Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy. Appl Phys. Lett. 72 (1998) 921.
    • (1998) Appl Phys. Lett. , vol.72 , pp. 921
    • Beaumont, B.1    Haffouz, S.2    Gibart, P.3
  • 85
    • 35949005062 scopus 로고
    • Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties
    • P. Perlin, I. Gorczyca, N. E. Christensen, I. Grzegory, H. Teisseyre, and T. Suski: Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties. Phys. Rev. B45 (1992) 13307.
    • (1992) Phys. Rev. , vol.B45 , pp. 13307
    • Perlin, P.1    Gorczyca, I.2    Christensen, N.E.3    Grzegory, I.4    Teisseyre, H.5    Suski, T.6
  • 86
    • 84876650424 scopus 로고    scopus 로고
    • private information
    • S. Porowski, private information.
    • Porowski, S.1
  • 87
    • 0000274548 scopus 로고    scopus 로고
    • Damage-free separation of GaN thin films from sapphire substrates
    • W. S. Wong, T. Sands, and N. W. Cheung: Damage-free separation of GaN thin films from sapphire substrates. Appl. Phys. Lett. 72 (1998) 599.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 599
    • Wong, W.S.1    Sands, T.2    Cheung, N.W.3
  • 88
    • 84876656370 scopus 로고    scopus 로고
    • Recent developments in InGaN-based laser diodes
    • Paper 200
    • S. Nakamura: Recent developments in InGaN-based laser diodes. SPIE Proc. 3283 (1998) Paper 200.
    • (1998) SPIE Proc. , vol.3283
    • Nakamura, S.1
  • 93
    • 21544458581 scopus 로고
    • High-power InGaN/GaN double-heterostructure violet light emitting diodes
    • S. Nakamura, M. Senoh, and T. Mukai: High-power InGaN/GaN double-heterostructure violet light emitting diodes. Appl. Phys. Lett. 62 (1993) 2390.
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 2390
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 95
    • 0000169915 scopus 로고
    • GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition
    • M. A. Khan, J. N. Kuznia, D. T. Olson, T. George, and T. Pike: GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition. Appl. Phys. Lett. 63 (1993) 3470.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 3470
    • Khan, M.A.1    Kuznia, J.N.2    Olson, D.T.3    George, T.4    Pike, T.5
  • 96
    • 36449003017 scopus 로고
    • Non-alloyed ohmic contacts on GaN using InN/GaN short-period superlattices
    • M. E. Lin, F. Y. Huang, and H. Morkoç: Non-alloyed ohmic contacts on GaN using InN/GaN short-period superlattices. Appl. Phys. Lett. 64 (1994) 2557.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 2557
    • Lin, M.E.1    Huang, F.Y.2    Morkoç, H.3
  • 98
    • 0029256455 scopus 로고
    • Direct patterning of the current confinement structure for p-type column-III nitrides by low-energy electron beam irradiation treatment
    • M. Inamori, H. Sakai, T. Tanaka, H. Amano, and I. Akasaki: Direct patterning of the current confinement structure for p-type column-III nitrides by low-energy electron beam irradiation treatment. Jpn. J. Appl. Phys. 34 (1995) 1190.
    • (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 1190
    • Inamori, M.1    Sakai, H.2    Tanaka, T.3    Amano, H.4    Akasaki, I.5
  • 107
    • 84876596133 scopus 로고    scopus 로고
    • Ref. 75, Chapter 5
    • Ref. 75, Chapter 5.
  • 108
    • 0030125859 scopus 로고    scopus 로고
    • Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers
    • W. Nakwaski: Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers. Opt. Quantum Electron. 28 (1996) 335.
    • (1996) Opt. Quantum Electron. , vol.28 , pp. 335
    • Nakwaski, W.1
  • 112
    • 0028480945 scopus 로고
    • Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperatures
    • M. A. Khan, S. Krishnankutty, R. A. Skogman, J. N. Kuznia, D. T. Olson, and T. George: Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperatures. Appl. Phys. Lett. 65 (1994) 520.
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 520
    • Khan, M.A.1    Krishnankutty, S.2    Skogman, R.A.3    Kuznia, J.N.4    Olson, D.T.5    George, T.6
  • 114
    • 0020194066 scopus 로고
    • 1-xN films prepared by reactive molecular beam epitaxy
    • 1-xN films prepared by reactive molecular beam epitaxy. J. Appl. Phys. 53 (1982) 6845.
    • (1982) J. Appl. Phys. , vol.53 , pp. 6845
    • Yoshida, S.1    Misawa, S.2    Gonda, S.3
  • 115
    • 0031344410 scopus 로고    scopus 로고
    • Threshold evaluation of GaN/AlGaN/AlN vertical-cavity surface-emitting lasers
    • P. Maćkowiak and W. Nakwaski: Threshold evaluation of GaN/AlGaN/AlN vertical-cavity surface-emitting lasers. Electron Technology 30 (1997) 314.
    • (1997) Electron Technology , vol.30 , pp. 314
    • Maćkowiak, P.1    Nakwaski, W.2
  • 116
    • 84876643584 scopus 로고    scopus 로고
    • Prospects for nitride vertical-cavity surface-emitting lasers
    • Brugge, 17-20 June
    • P. Maćkowiak and W. Nakwaski: Prospects for nitride vertical-cavity surface-emitting lasers. Conference "Optics in Computing" (Brugge, 17-20 June, 1998).
    • (1998) Conference "Optics in Computing"
    • Maćkowiak, P.1    Nakwaski, W.2
  • 118
    • 84876596292 scopus 로고    scopus 로고
    • private information
    • M. Bugajski, private information.
    • Bugajski, M.1
  • 120
    • 84876640544 scopus 로고    scopus 로고
    • Threshold evaluation of GaN/AlGaN/AlN vertical-cavity surface-emitting lasers with various active regions
    • Warsaw, June 22-24
    • P. Maćkowiak and W. Nakwaski: Threshold evaluation of GaN/AlGaN/AlN vertical-cavity surface-emitting lasers with various active regions. 3rd European GaN Workshop (Warsaw, June 22-24, 1998).
    • (1998) 3rd European GaN Workshop
    • Maćkowiak, P.1    Nakwaski, W.2


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