High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 3 B, 1998, Pages

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Nagahama, Shin ichi ^a   Iwasa, Naruhito ^a   Yamada, Takao ^a   Matsushita, Toshio ^a   Kiyoku, Hiroyuki ^a   Sugimoto, Yasunobu ^a   Kozaki, Tokuya ^a   Umemoto, Hitoshi ^a   Sano, Masahiko ^a   Chocho, Kazuyuki ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES;

GALLIUM NITRIDE; SELECTIVE GROWTH;

QUANTUM WELL LASERS;

EID: 0032025340     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l309     Document Type: Article

References (12)