A perspective on the GaN injection laser

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Pankove, J I ^a  

^a Astralux Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; EXCITONS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT ABSORPTION; OPTICAL DATA STORAGE; PHOTONS; ULTRAVIOLET RADIATION;

BAND GAP PHOTONS; DEFECT DEGRADATION; HIGH MOBILITY MATERIALS; NEAR BAND GAP PHOTONS;

INJECTION LASERS;

EID: 3242811396     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300001459     Document Type: Review

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