GaN-based blue/green semiconductor laser

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 435-442

  Nakamura, Shuji ^a,b,c  

^a NICHIA CORPORATION   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

Blue LD; Blue LED; GaN; MQW

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; LIGHT ABSORPTION; LIGHT EMITTING DIODES; LUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

BLUE/GREEN SEMICONDUCTOR LASERS; GALLIUM NITRIDE; OPTICAL CONFINEMENT FACTOR;

QUANTUM WELL LASERS;

EID: 0031108484     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605690     Document Type: Article

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