Radiative lifetime of excitons in GalnN/GaN quantum wells

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Im, Jin Seo ^a   Härle, Volker ^a   Scholz, Ferdinand ^a   Hangleiter, Andreas ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

NONRADIATIVE RECOMBINATION PROCESSES; THERMAL DISSOCIATION; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

DISSOCIATION; EXCITONS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS; THERMAL EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3242805339     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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3. P Michler, A Hangleiter, A Moritz, V Härle, F Scholz, Phys. Rev. B 47, 1671 (1993).
4. BK Ridley, Phys. Rev. B 41, 12190 (1990).
5. C. Merz, M. Kunzer, U. Kaufmann, Semicond. Sci. Technol. 11, 712 (1996).