Characteristics of room temperature-CW operated InGaN multi-quantum-well- structure laser diodes

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Nakamura, Shuji ^a  

^a Nichia Chemical Industries   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STIMULATED EMISSION; TRANSPARENCY;

CAVITY LENGTH; MODE HOPPING; OPTICAL GAIN; ROOM TEMPERATURE (RT);

SEMICONDUCTOR LASERS;

EID: 0343367300     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001319     Document Type: Article

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