Growth, doping and characterization of AlxGa1-x N thin film alloys on 6H-SiC(0001) substrates

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Bremser, M D ^a   Perry, W G ^a   Zheleva, T ^a   Edwards, N V ^a   Nam, O H ^a   Parikh, N ^b   Aspnes, D E ^c   Davis, Robert F ^a  

^a North Carolina State University   (United States)

^b UNIVERSITY OF NORTH CAROLINA   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ATOMIC FORCE MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; MATHEMATICAL MODELS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLOGRAPHIC COALESCENCE; DOUBLE-CRYSTAL X-RAY ROCKING CURVE (DCXRC); SPECTROSCOPIC ELLIPSOMETRY (SE);

THIN FILMS;

EID: 4043151460     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001800     Document Type: Article

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