Shortest wavelength semiconductor laser diode

Electronics Letters

Volumn 32, Issue 12, 1996, Pages 1105-1106

  Akasaki, I ^a   Sota, S ^a   Sakai, H ^a   Tanaka, T ^b   Koike, M ^c   Amano, H ^a  

^a MEIJO UNIVERSITY   (Japan)

^b PIONEER CORPORATION   (Japan)

^c Toyoda Gosei Co Ltd   (Japan)

Author keywords

Gallium nitride; Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; WAVEGUIDES;

CURRENT INJECTION; KRONIG-PENNY MODEL; SEMICONDUCTOR JUNCTION LASERS; SEPARATE CONFINEMENT HETEROSTRUCTURE; SINGLE PASS MONOCHROMATOR;

SEMICONDUCTOR LASERS;

EID: 0030572215     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960743     Document Type: Article

References (8)

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