Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets

Electronics Letters

Volumn 34, Issue 4, 1998, Pages 373-375

  Stocker, D ^a   Schubert, E F ^a   Boutros, K S ^a   Flynn, J S ^a   Vaudo, R P ^a   Phanse, V M ^a   Redwing, J M ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LASER PULSES; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PUMPING; OPTICALLY PUMPED LASERS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

QUANTUM WELL LASERS;

EID: 0032545824     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980323     Document Type: Article

References (6)

1. 0.95/N multiquantum well laser structure', Appl. Phys. Lett., 1997, 70, pp. 1650-1652
2. ASIF KHAN, M., SUN, C.J., YANG, J.W., CHEN, Q., LIM, B.W., ZUBAIR ANWAR, M., OSINSKY, A., and TEMKIN, H.: 'Cleaved cavity optically pumped InGaN-GaN laser grown on spinel substrates', Appl. Phys. Lett., 1996, 69, (16), pp. 2418-2420
3. SHMAGIN, I.K., MUTH, J.F., KOLBAS, R.M., KRISHNANKUTTY, S., KELLER, S., MISHRA, U.K., and DENBAARS, S.P.: Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration', J. Appl. Phys., 1997, 81, (4), pp. 2021-2023
4. NAKAMURA, S.: 2nd Int. Conf. on Nitride Semiconductors, 1997
5. NAKAMURA, S., SENOH, M., NAGAHAMA, S.-I., IWASA, N., YAMADA, T., MATSUSHITA, T., SUGIMOTO, Y., and KIYOKU, H.: 'Ridge-geometry InGaN multi-quantum-well-structure laser diodes', Appl. Phys. Lett., 1996, 69, (10), pp. 1477-1479
6. NAKAMURA, S., SENOH, M., NAGAHAMA, S.-I., IWASA, N., YAMADA, T., MATSUSHITA, T., SUGIMOTO, Y., and KIYOKU, H.: 'Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours', Appl. Phys. Lett., 1997, 70, (11), pp. 1417-1419