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Volumn 34, Issue 2, 1998, Pages 193-195

P/He ion implant isolation technology for AlGaN/GaN HFETs

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE MEASUREMENT; HELIUM; ION IMPLANTATION; PHOSPHORUS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

EID: 0031652510     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980091     Document Type: Article
Times cited : (38)

References (7)
  • 1
    • 36449006910 scopus 로고
    • Temperature activated conductance in GaN/ALGaN heterostructure field effect transistors operating at temperatures up to 300°C
    • ASIF KAHN, M., SHUR, M.S., KUZNIA, J.N., CHEN, Q., BURM, J., and SCHAFF, W.: 'Temperature activated conductance in GaN/ALGaN heterostructure field effect transistors operating at temperatures up to 300°C', Appl. Phys. Lett., 1995, 66, (9), p. 1083
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.9 , pp. 1083
    • Asif Kahn, M.1    Shur, M.S.2    Kuznia, J.N.3    Chen, Q.4    Burm, J.5    Schaff, W.6
  • 2
    • 21544459054 scopus 로고    scopus 로고
    • Enhancement and depleation mode GaN/AlGaN heterostructure field effect transistors
    • ASIF KAHN, M., CHEN, Q., SUN, C.J., YANG, J.W., SHUR, M.S., and PARK, H.: 'Enhancement and depleation mode GaN/AlGaN heterostructure field effect transistors', Appl. Phys. Lett., 1996, 68, (4), p. 514
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.4 , pp. 514
    • Asif Kahn, M.1    Chen, Q.2    Sun, C.J.3    Yang, J.W.4    Shur, M.S.5    Park, H.6
  • 6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.