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Volumn 34, Issue 2, 1998, Pages 193-195
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P/He ion implant isolation technology for AlGaN/GaN HFETs
a a a a a b c c |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ELECTRIC RESISTANCE MEASUREMENT;
HELIUM;
ION IMPLANTATION;
PHOSPHORUS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
THERMAL EFFECTS;
HETEROJUNCTION FIELD EFFECT TRANSISTORS;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
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EID: 0031652510
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:19980091 Document Type: Article |
Times cited : (38)
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References (7)
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