Thermally oxidized AIN thin films for device insulators

Applied Physics Letters

Volumn 70, Issue 20, 1997, Pages 2732-2734

  Chowdhury, E A ^a   Kolodzey, J ^a   Olowolafe, J O ^a   Qiu, G ^a   Katulka, G ^a   Hits, D ^a   Dashiell, M ^a   Van Der Weide, D ^a   Swann, C P ^a   Unruh, K M ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CAPACITORS; CRYSTAL STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXIDATION; PERMITTIVITY; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON WAFERS;

ALUMINUM NITRIDE; CAPACITANCE VOLTAGE CHARACTERISTICS; CHARGE DENSITY;

THIN FILMS;

EID: 0031146767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118980     Document Type: Article

References (10)

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