Free excitons in GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Monemar, B ^a   Bergman, J P ^a   Buyanova, I A ^a   Li, W ^a   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; EPITAXIAL GROWTH; GALLIUM; LATTICE CONSTANTS; POINT DEFECTS; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; STRAIN RATE; THERMAL EXPANSION;

DISLOCATION DEFECT REACTIONS; EXCITON ENERGIES; EXCITON-PHONON COUPLING;

EXCITONS;

EID: 3242794427     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300001745     Document Type: Article

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