Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

Applied Physics Letters

Volumn 71, Issue 4, 1997, Pages 425-427

  Sun, C K ^a,b   Chiu, T L ^a   Keller, S ^b   Wang, G ^b   Minsky, M S ^b   DenBaars, S P ^b   Bowers, J E ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; INTERFACES (MATERIALS); OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

BIMOLECULAR RADIATIVE RECOMBINATION; CARRIER LIFETIMES; CARRIER RECOMBINATION; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; QUANTUM EFFICIENCY MEASUREMENT; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031191805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119568     Document Type: Article

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