Modeling of optical gain in InGaN-AlGaN and InxGa1-xN-InyGa1-yN quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 5, 1996, Pages 859-864

  Jain, F ^a   Huang, W ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT DENSITY; ENERGY GAP; EXCITONS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BLUE GREEN LASERS; EXCITON EMISSION ENERGY; GAS SOURCE MOLECULAR BEAM EPITAXY; OPTICAL GAIN; PHOTON EMISSION ENERGY; THRESHOLD CURRENT DENSITY; ULTRAVIOLET LASERS;

QUANTUM WELL LASERS;

EID: 0030151273     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.493011     Document Type: Article

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