Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 SUPPL. B, 1996, Pages

  Itaya, Kazuhiko ^a   Onomura, Masaaki ^a   Nishio, Johji ^a   Sugiura, Lisa ^a   Saito, Shinji ^a   Suzuki, Mariko ^a   Rennie, John ^a   Nunoue, Shin Ya ^a   Yamamoto, Masahiro ^a   Fujimoto, Hidetoshi ^a   Kokubun, Yoshihiro ^a   Ohba, Yasuo ^a   Hatakoshi, Gen Ichi ^a   Ishikawa, Masayuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

C face; Cleavage; Facet; GaN; Laser diode; MOCVD; Nitride; Sapphire

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCULATIONS; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PLASMA ETCHING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CLEAVAGE; CLEAVED FACETS; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030264202     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1315     Document Type: Article

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