Atomic scale indium distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N quantum well structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6932-6936

  Kisielowski, Christian ^a   Liliental Weber, Zuzanna ^b   Nakamura, Shuji ^c  

^a University of California ^*  (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c NICHIA CORPORATION   (Japan)

Author keywords

GaN; HRTEM; Quantum wells; Segregation

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; ETCHING; INTERFACES (MATERIALS); NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031271221     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6932     Document Type: Article

References (17)

1. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) L797.
2. S. Chichibu, T. Asuhata, T. Sota and S. Nakamura: Appl. Phys. Lett. 69 (1996) 4188.
3. Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura: Phys. Rev. B 55 (1997) 1938R.
4. S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra and S. P. Den Baars: Appl. Phys. Lett. 68 (1996) 3147.
5. I. H. Ho and G. B. Stringfellow: Mater. Res. Soc. Proc. 449 (1997) 871.
6. A. Ourmazd, D. W. Taylor, M. Bode and Y. Kim: Science 246 (1989) 1571.
7. P. Schwander, C. Kisielowski, M. Seibt, F. H. Baumann, Y. Kim and A. Ourmazd: Phys. Rev. Lett. 71 (1993) 4150.
8. C. Kisielowski, P. Schwander, F. H. Baumann, M. Seibt, Y. Kim and A. Ourmazd: Ultramicroscopy 58 (1995) 131.
9. D. B. Williams and C. B. Carter: Transmission Electron Microscopy (Plenum Press, New York 1996) p. 512.
10. The implementation of quantitative HRTEM for the GaN/InN/AIN system involves several aspects that are not outlined here but will be published elsewhere. Here, it is noted that a local strain can be separated from a local compositional change because strain distorts the geometrical dimensions of the cells in a lattice image while a compositional change affects the intensity distribution within each cell. A complete analyses allows for local stress and for local composition measurements. Sample tilt affects the pattern change and can be included in the analyses if it is small (<1 mrad).
11. S. S. Dosanjih, X. M. Zhang, D. Sansom, J. J. Harris, M. R. Fahy, B. A. Joyce and J. B. Clegg: J. Appl. Phys. 74 (1993) 2481.
12. D. A. Gruetzmacher, T. O. Sedgwick, A. Powell, M. Tejwani, S. S. Iyer, J. Cotte and F. Cardone: Appl. Phys. Lett. 63 (1993) 2531.
13. M. S. Minski, M. White and E. L. Hu: Appl. Phys. Lett. 68 (1996) 1531.
14. J.-L. Rouviere, Y. Kim, J. Cunningham, J. A. Rentschler, A. Bourret and A. Ourmazd: Phys. Rev. Lett. 68 (1992) 2798.
15. F. H. Baumann, J. H. Huang, J. A. Rentschler, T. Y. Chang and A. Ourmazd: Phys. Rev. Lett. 73 (1994) 448.
16. C. Kisielowski, Z. Liliental-Weber and E. R. Weber: Braz. J. Phys. 26 (1996) 83.
17. J. F. Zheng, J. D. Walker, M. B. Salmeron and E. R. Weber: Phys. Rev. Lett. 72 (1994) 2414.