Threshold evaluation of GaN/AlGaN/AlN vertical-cavity surface-emitting lasers

Electron Technology (Warsaw)

Volumn 30, Issue 4, 1997, Pages 314-323

  Mackowiak, P ^a   Nakwaski, W ^a  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM NITRIDE; THRESHOLD ANALYSIS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0031344410     PISSN: 00709816     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (39)