Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 635-637

  Smith, M ^a   Lin, J Y ^a   Jiang, H X ^a   Asif Khan, M ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ENERGY GAP; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS;

BLUE LASERS; ELECTRON HOLE PLASMA; EPILAYERS; EXCITONIC TRANSITION; GALLIUM NITRIDE; INTRINSIC OPTICAL TRANSITION; ROOM TEMPERATURE; THOMA-FERMI SCREENING POTENTIAL;

PHOTOLUMINESCENCE;

EID: 0031552824     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119813     Document Type: Article

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