Mechanisms of band-edge emission in Mg-doped p-type GaN

Applied Physics Letters

Volumn 68, Issue 14, 1996, Pages 1883-1885

  Smith, M ^a   Chen, G D ^a   Lin, J Y ^a   Jiang, H X ^a   Salvador, A ^b   Sverdlov, B N ^b   Botchkarev, A ^b   Morkoc, H ^b   Goldenberg, B ^c  

^a KANSAS STATE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; FERMI LEVEL; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REACTION KINETICS; SEMICONDUCTOR DOPING;

BAND EDGE EMISSION; CARRIER RECOMBINATION; CONDUCTION BAND TO IMPURITY TRANSITION; DECAY KINETICS; DEEP LEVEL CENTERS; GALLIUM NITRIDE; PHOTOLUMINESCENCE EXCITATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030130308     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116282     Document Type: Article

References (15)

1. H. Morkoc, S. Strite, G. B Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
2. S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 31, 1258 (1992); S. Nakamura, M. Senoh, and T. Mukai, ibid. 32, L8 (1993).
3. M. S. Brandt, N. M. Johnson, R. J. Molnar, R. Singh, and T. D. Moustakas, Appl. Phys. Lett. 64, 2264 (1994).
4. M. Rubin, N. Newman, J. S. Chan, T. C. Fu, and J. R. Ross, Appl. Phys. Lett. 64, 64 (1994).
5. M. E. Lin, G. Xue, G. L. Zhou, J. E. Green, and H. Morkoc, Appl. Phys. Lett. 63, 932 (1993).
6. T. Tanaka, A. Watanabe, A. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike, Appl. Phys. Lett. 65, 593 (1994).
7. M. Smith, G. D. Chen, J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, W. K. Kim, O. Aktas, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 67, 3387 (1995).
8. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, Appl. Phys. Lett. 67, 1653 (1995); M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, ibid. 67, 3295 (1995).
9. B. Goldenberg, J. D. Zook, and R. Ulmer, Appl. Phys. Lett. 62, 381 (1993).
10. I. Akasaki, H. Amano, M. Kito, and K. Hiramatsu, J. Lumin. 48/49, 666 (1991).
11. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 66, 3477 (1995).
12. R. Dingle and M. Ilegems, Solid State Commun. 9, 175 (1971).
13. D. G. Thomas, J. J. Hopfield, and W. M. Augustyniak, Phys. Rev. 140, 202 (1965).
14. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971), Chap. 6, p. 148.
15. P. Avouris and T. N. Morgan, J. Chem. Phys. 74, 4347 (1981).