Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

Applied Physics Letters

Volumn 72, Issue 6, 1998, Pages 692-694

  Wu, X H ^a   Elsass, C R ^a   Abare, A ^a   MacK, M ^a   Keller, S ^a   Petroff, P M ^a   Denbaars, S P ^a   Speck, J S ^a   Rosner, S J ^b  

^a University of California at Santa Barbara   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544482023     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120844     Document Type: Article

References (7)

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