Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Electronics Letters

Volumn 33, Issue 18, 1997, Pages 1556-1557

  Bulman, G E ^a   Doverspike, K ^a   Sheppard, S T ^a   Weeks, T W ^a   Kong, H S ^a   Dieringer, H M ^a   Edmond, J A ^a   Brown, J D ^b   Swindell, J T ^b   Schetzina, J F ^b  

^a Research Triangle Park   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells; Silicon carbide

Indexed keywords

CURRENT DENSITY; ELECTROMAGNETIC FIELD MEASUREMENT; HETEROJUNCTIONS; LASER MODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

TRANSVERSE ELECTROMAGNETIC (TEM) MODES;

QUANTUM WELL LASERS;

EID: 0031209878     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971025     Document Type: Article

References (4)

1. NAKAMURA, S., and FASOL, G.: 'The blue laser diode' (Springer, Berlin, 1997), PP. 223-264
2. AKASAKI, I., SOTA, S., SAKAI, H., TANAKA, T., KOIKE, M., and AMANO, H.: 'Shortest wavelength semiconductor laser diode', Electron. Lett., 1996, 32, (12), pp. 1105-1106
3. ITAYA, K., ONOMURA, M., NISHIO, O., SUGIURA, L., SAITO, S., SUZUKI, M., RENNIE, J., NUNOUE, S., YAMAMOTO, M., FUJIMOTO, H., KOKUBUN, Y., OHBA, Y., HATAKOSHI, G., and ISHIKAWA, M.: 'Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates', Jpn. J. Appl Phys. 2 Lett., 1996, 35, (10B), pp. L1315-17
4. NAKAMURA, S., SENOH, M., NAGAHAMA, S.N., IWASA, N., YAMADA, T., MATSUSHITA, T., SUGIMOTO, Y., and KIYOKU, H.: 'Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation', Appl. Phys. Lett., 1997, 70, (20), pp. 2753-2755