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Progress in Surface Science

Volumn 69, Issue 4-6, 2002, Pages 101-124

Theoretical studies of silicon carbide surfaces

(2) Catellani, Alessandra a Galli, Giulia b

a CNR (Italy)

b LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

Chemisorption; Density functional calculations; Silicon carbide; Surface relaxation and reconstruction

Indexed keywords

CHEMISORPTION; COMPUTER SIMULATION; ELECTRONIC PROPERTIES; PROBABILITY DENSITY FUNCTION; STOICHIOMETRY; SURFACE PHENOMENA; SURFACE STRUCTURE;

SURFACE RELAXATION;

SILICON CARBIDE;

EID: 0036132455 PISSN: 00796816 EISSN: None Source Type: Journal
DOI: 10.1016/S0079-6816(01)00048-X Document Type: Review

Times cited : (49)

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