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Volumn 401, Issue 1, 1998, Pages
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Pairs of Si atomic lines self-assembling on the b-SiC (100) surface: An 8 x 2 reconstruction
a
CEA SACLAY
(France)
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Author keywords
Scanning tunneling microscopy; Silicon carbide; Superlattices; Surface relaxation and reconstruction; Surface structure, morphology, roughness and topography
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Indexed keywords
MORPHOLOGY;
ORDER DISORDER TRANSITIONS;
RELAXATION PROCESSES;
SCANNING TUNNELING MICROSCOPY;
SUPERLATTICES;
SURFACE PHENOMENA;
SURFACE ROUGHNESS;
SURFACE RECONSTRUCTION;
SURFACE RELAXATION;
SILICON CARBIDE;
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EID: 0032024289
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(98)00077-6 Document Type: Article |
Times cited : (50)
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References (13)
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