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Volumn 401, Issue 1, 1998, Pages

Pairs of Si atomic lines self-assembling on the b-SiC (100) surface: An 8 x 2 reconstruction

Author keywords

Scanning tunneling microscopy; Silicon carbide; Superlattices; Surface relaxation and reconstruction; Surface structure, morphology, roughness and topography

Indexed keywords

MORPHOLOGY; ORDER DISORDER TRANSITIONS; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SUPERLATTICES; SURFACE PHENOMENA; SURFACE ROUGHNESS;

EID: 0032024289     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00077-6     Document Type: Article
Times cited : (50)

References (13)
  • 2
    • 0346594956 scopus 로고    scopus 로고
    • Silicon Carbide Electronic Devices and Materials
    • Silicon Carbide Electronic Devices and Materials, Materials Research Society Bulletin, Vol. 22, 1997.
    • (1997) Materials Research Society Bulletin , vol.22
  • 3
    • 0000920530 scopus 로고
    • G. Harris (Ed.), EMIS Datareview Series, INSPEC, London
    • R. Kaplan, V.M. Bermudez, in: G. Harris (Ed.), Properties of Silicon Carbide, EMIS Datareview Series, INSPEC, London, 1995, Vol. 13, p. 101.
    • (1995) Properties of Silicon Carbide , vol.13 , pp. 101
    • Kaplan, R.1    Bermudez, V.M.2
  • 5
    • 11644309662 scopus 로고    scopus 로고
    • (Paris) and references therein
    • P. Soukiassian, F. Semond, J. Physique IV (Paris) 7, C6 (1997) 101, and references therein.
    • (1997) J. Physique IV , vol.7 , Issue.C6 , pp. 101
    • Soukiassian, P.1    Semond, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.