Intrinsic defects in cubic silicon carbide

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 1, 1997, Pages 173-198

  Itoh, H ^a,d   Kawasuso, A ^a   Ohshima, T ^a   Yoshikawa, M ^a   Nashiyama, I ^a   Tanigawa, S ^b   Misawa, S ^c,e   Okumura, H ^c   Yoshida, S ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^e ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; ELECTRIC PROPERTIES; ELECTRON SPIN RESONANCE SPECTROSCOPY; HALL EFFECT; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION DAMAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS;

CUBIC SILICON CARBIDE; ELECTRON IRRADIATION; POSITRON ANNIHILATION SPECTROSCOPY (PAS);

SILICON CARBIDE;

EID: 0031191986     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199707)162:1<173::AID-PSSA173>3.0.CO;2-W     Document Type: Article

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