Nitride-based semiconductors for blue and green light-emitting devices

Nature

Volumn 386, Issue 6623, 1997, Pages 351-359

  Ponce, F A ^a   Bour, D P ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN DERIVATIVE;

DIODE LASER; ELECTRONICS; LIGHT EMITTING DIODE; OPTICAL INSTRUMENTATION; PRINTING; PRIORITY JOURNAL; REVIEW; SEMICONDUCTOR;

EID: 0030975368     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/386351a0     Document Type: Review

References (58)

1. Lighting and lighting devices in The New Encyclopedia Britannica 15th Edn, Vol. 23, 29-38 (Encyclopaedia Britannica Inc., Chicago, 1986).
2. Black, J., Lowckwood, H. & Mayburg, S. Recombination radiation in GaAs. J. Appl. Phys. 34, 178-180 (1963).
3. x) junctions. Appl. Phys. Lett. 1, 82-83 (1962).
4. Dupuis, R. D. An introduction to the development of the semiconductor laser. IEEE J. Quant. Electr. QE-23, 651-657 (1987).
5. Craford, M. G. LEDs challenge the incandescents. IEEE Circuit Devices 8, 25-29 (1992).
6. Craford, M. G. & Steranka, F. M. Light Emitting Diodes, in Encyclopedia of Applied Physics Vol. 8, 485-514 (VCH, New York, 1994).
7. Akasaki, I. & Amano, H. Wide-gap column-III nitride semiconductors for UV/blue light emitting devices. J. Electrochem. Soc. 141, 2266-2271 (1994).
8. Morkoc, H. et al. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. J. Appl. Phys. 76, 1363-1398 (1994).
9. Mohammad, S. N., Salvador, A. A. & Morkoc, H. Emerging gallium nitride based devices. Proc. IEEE 83, 1306-1355 (1995).
10. Neumayer, D. A. & Ekerdt, J. G. Growth of group III nitrides: A review of precursors and techniques. Chem. Mater. 8, 9-25 (1996).
11. Nakamura, S. et al. InGaN-based multi-quantum-well structure laser diodes. Jpn. J. Appl. Phys. 35, L74-L76 (1996).
12. Nakamura, S. Characteristics of InGaN multi-quantum-well-structure laser diodes. Mater. Res. Soc. Proc. 449, 1135-1142 (1996).
13. Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Urdizabal, M. C. & Craford, M. G. High performance AlGaInP visible light-emitting diodes. Appl. Phys. Lett. 57, 2937-2939 (1990).
14. Fichter, F. Über Aluminiumnitrid. Z. Anorg. Chem. 54, 322-327 (1907).
15. Lirmann, J. V. & Schdanov, H. S. The crystalline structure of GaN. Acta Physicochim. URSS 6, 306 (1937).
16. Maruska, H. P. & Tietjen, J. J. The preparation and properties of vapor-deposited single-crystalline GaN. Appl. Phys. Lett. 15, 327-329 (1969).
17. Pankove, J. I., Miller, E. A. & Berkeyheiser, J. E. GaN electroluminescent diodes. RCA Rev. 32, 383-392 (1971).
18. Manasevit, H. M. Erdmann, F. M. & Simpson, W. I. The use of metalorganics in the preparation of semiconductor materials. J. Electrochem. Soc. 118, 1864-1868 (1971).
19. Dingle, R., Shaklee, K. L., Leheny, R. F. & Zetterstrom, R. B. Stimulated emission and laser action in gallium nitride. Appl. Phys. Lett. 19, 5-7 (1971).
20. Yoshida, S., Misawa, S. & Gonda, S. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substates. Appl. Phys. Lett. 42, 427-429 (1983).
21. Chang, C.-A., Takaoka, H., Chang, L. L. & Esaki, L. Molecular beam epitaxy of AlSb. Appl. Phys. Lett. 40, 983-985 (1982).
22. Wang, W. I. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si(100). Appl. Phys. Lett. 44, 1149-1151 (1984).
23. Amano, H., Sawaki, N., Akasaki, I. & Toyoda, Y. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Appl. Phys. Lett. 48, 353-355 (1986).
24. Johnson, N. M., Burnham, R. D., Street, R. A. & Thornton, R. L. Hydrogen passivation of shallow-acceptor impurities in p-type GaAs. Phys. Rev. B 33, 1102-1105 (1986).
25. Antell, G. R. et al. Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy. Appl. Phys. Lett. 53, 758-760 (1988).
26. Amano, H., Kito, M., Hiramatsu, K. & Akasaki, I. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn. J. Appl. Phys. 28, L2112-L2114 (1989).
27. Nakamura, S., Mukai, T., Senoh, M. & Iwasa, N. Thermal annealing effects on p-type Mg-doped GaN films. Jpn. J. Appl. Phys. 31, L139-L142 (1992).
28. Akasaki, I., Amano, H., Itoh, K., Koide, N. & Manabe, K. GaN-based ultraviolet/blue light emitting devices. Inst. Phys. Conf. Ser. 129, 851-856 (1992).
29. 1-yN superlattices grown on GaN films. J. Appl. Phys. 74, 3911-3915 (1993).
30. Nakamura, S., Mukai, T. & Senoh, M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett. 64, 1687-1689 (1994).
31. Nakamura, S., Mukai, T. & Senoh, M. High-brightness InGaN/AlGaN double heterostructure blue-green light-emitting diodes. J. Appl. Phys. 76, 8189-8191 (1994).
32. Lester, S. D., Ponce, F. A., Craford, M. G. & Steigerwald, D. A. High dislocation densities in high efficiency GaN-based light-emitting diodes. Appl. Phys. Lett. 66, 1249-1251 (1995).
33. Nakamura, S., Senoh, M., Iwasa, N. & Nagahama, S. High-brightness InGaN blue, green and yellow lihht-emitting diodes with quantum well structures. Jpn. J. Appl. Phys. 34, L797-L799 (1995).
34. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada T. & Mukai, T. Superbright green InGaN SQW structure LEDs. Jpn. J. Appl. Phys. 34, L1332-L1335 (1995).
35. Ponce, F. A., Major, J. S. Jr, Plano, W. E. & Welch, D. F. Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers. Appl. Phys. Lett. 65, 2302-2304 (1994).
36. Ponce, F. A., Hour, D. P., Götz, W. & Wright, P. J. Spatial distribution of the luminescence in GaN thin films. Appl. Phys. Lett. 68, 57-59 (1996).
37. Nakamura, S. GaN growth using GaN buffer layer. Jpn. J. Appl. Phys. 30, L1705-L1707 (1991).
38. Ponce, F. A., Krusor, B. S., Major, J. S. Jr, Plano, W. E. & Welch, D. F. Microstructure of GaN epitaxy on SiC using AlN buffer layers. Appl. Phys. Lett. 67, 410-412 (1995).
39. Ponce, F. A., Van de Walle, C. G. & Northrup, J. E. Atomic arrangement at the AlN/SiC interface. Phys. Rev. B 53, 7473-7478 (1996).
40. Ponce, F. A. et al. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition. Appl. Phys. Lett. 68, 917-919 (1996).
41. Amano, H., Asahi, T. & Akasaki, I. Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer. Jpn. J. Appl. Phys. 29, L205-L206 (1990).
42. Zubrilov, A. S. et al. Spontaneous and stimulated emission from photopumped GaN grown on SiC. Appl. Phys. Lett. 67, 533-535 (1995).
43. Khan, M. A., Krishnankutty, S., Skogman, R. A., Kuznia, J. N. & Olson, D. T. Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature. Appl. Phys. Lett. 65, 520-521 (1994).
44. Kim, S. T., Amano, H. & Akasaki, I. Surface-mode stimulated emission from optically pumped GaInN at room temperature. Appl. Phys. Lett. 67, 267-269 (1995).
45. Amano, H. et al. Room-temperature violet stimulated emission from optically pumped AlGaN/ GaInN double heterostructure. Appl. Phys. Lett. 64, 1377-1379 (1994).
46. Aggarwal, R. L., Maki, P. A., Molnar, R. J., Liau, Z.-L. & Melngailis, I. Optically pumped GaN/AlGaN double heterostructure ultraviolet laser. J. Appl. Phys. 79, 2148-2150 (1996).
47. Nakamura, S. et al. InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets. Jpn. J. Appl. Phys. 35, L217-L219 (1996).
48. Nakamura, S. et al. Ridge-geometry InGaN multi-quantum-well-structure laser diodes. Appl. Phys. Lett. 69, 1477-1479 (1996).
49. Akasaki, I. et al. Shortest wavelength semiconductor laser diode. Electron. Lett. 32, 1105-1106 (1996).
50. Itaya, K. et al. Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional c-face sapphire substrates. Jpn. J. Appl. Phys. 35, L1315-L1317 (1996).
51. Matsumoto T. & Aoki, M. Temperature dependence of photoluminescence from GaN. Jpn. J. Appl. Phys. 13, 1804-1807 (1974).
52. Akasaki, I. & Hayashi, I. Research on blue emitting devices. Ind. Sci. Technol. 17, 48-52 (1976) (in Japanese).
53. Yoshida, S., Misawa, S. & Itoh, A. Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation. Appl. Phys. Lett. 26, 461-462 (1975).
54. Karpinski, J., Porowski, S. & Miotkowska, S. High pressure vapor growth of GaN. J. Cryst. Growth 56, 77-82 (1982).
55. xN films prepared by MOVPE. Jpn. J. Appl. Phys. 28, L1334-L1336 (1989).
56. Nakamura, S. & Mukai, T. High-quality InGaN films grown on GaN films. Jpn. J. Appl. Phys. 31, L1457-L1459 (1992).
57. Hunt, R. W. G. Measuring Colour 1-313 (Ellis Horwood, London, 1995).
58. Wicks, G. W. The colour of light. Compound Semiconductor 1, 39-40 (1995).