Physical properties of cubic SiC(001) surfaces from first-principles simulations

Applied Surface Science

Volumn 162, Issue , 2000, Pages 1-8

  Galli, Giulia ^a   Pizzagalli, Laurent ^a   Catellani, Alessandra ^b   Gygi, Francois ^a   Baratoff, Alexis ^c  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b CNR   (Italy)

^c UNIVERSITY OF BASEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL SYMMETRY; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STRESS ANALYSIS; SURFACE PHENOMENA;

SURFACE RECONSTRUCTION;

SILICON CARBIDE;

EID: 0034247921     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00162-8     Document Type: Article

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