Influence of stress and defects on the silicon-terminated SiC(001) surface structure

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 19, 1998, Pages 12255-12261

  Catellani, Alessandra ^a   Galli, Giulia ^a   Gygi, François ^a   Pellacini, Fabio ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000675928     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.12255     Document Type: Article

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