Model of the epitaxial growth of SiC-polytypes under surface-stabilized conditons

Journal of Electronic Materials

Volumn 27, Issue 7, 1998, Pages 848-852

  Furthmuller J ^a   Kackell P ^a   Bechstedt, F ^a   Fissel, A ^a   Pfennighaus, K ^a   Schroter B ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Molecular beam epitaxy (MBE); Phase diagram; SiC polytypes

Indexed keywords

EID: 0001000471     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0108-1     Document Type: Article

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