Dominant recombination center in electron-irradiated 3C SiC

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3784-3786

  Son, N T ^a,c   Sorman E ^a   Chen, W M ^a   Singh, M ^a   Hallin, C ^a   Kordina, O ^a,d   Monemar, B ^a   Janzen E ^a   Lindstrom J L ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c HANOI UNIVERSITY   (Viet Nam)

^d ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001379241     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361214     Document Type: Article

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