Electronic structure of the 3C-SiC(001) 2 × 1 surface studied with angle-resolved photoelectron spectroscopy

Surface Science

Volumn 439, Issue 1-3, 1999, Pages 199-210

  Duda, L ^a   Johansson, L S O ^a   Reihl, B ^a   Yeom, H W ^b   Hara, S ^c   Yoshida, S ^c  

^a TU DORTMUND UNIVERSITY   (Germany)

^b UNIVERSITY OF TOKYO   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CHEMICAL BONDS; FERMI LEVEL; MATHEMATICAL MODELS; SINGLE CRYSTALS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ALTERNATING UP AND DOWN DIMER MODEL; DANGLING BOND; LOW INDEX SINGLE CRYSTAL SURFACE; MISSING ROW ASYMMETRIC DIMER MODEL; SURFACE BRILLOUIN ZONE; SURFACE ELECTRONIC PHENOMENA; SURFACE RECONSTRUCTION; VALENCE BAND;

SILICON CARBIDE;

EID: 0343526972     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00763-3     Document Type: Article

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