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Volumn 60, Issue 24, 1999, Pages 16553-16557

Core-level photoemission spectroscopy of the β-SiC(100) c(4×2) surface

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Indexed keywords


EID: 0001412696     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.16553     Document Type: Article
Times cited : (29)

References (31)
  • 2
    • 0003343627 scopus 로고
    • Properties of Silicon Carbide
    • INSPEC, London
    • Properties of Silicon Carbide, edited by G. Harris, EMIS Datareview Series (INSPEC, London, 1995), Vol. 13.
    • (1995) EMIS Datareview Series , vol.13
    • Harris, G.1
  • 3
    • 0346594956 scopus 로고    scopus 로고
    • Silicon Carbide Electronic Devices and Materials
    • Silicon Carbide Electronic Devices and Materials, [Mater. Res. Soc. Bull. 22 (1997)].
    • (1997) Mater. Res. Soc. Bull , vol.22


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.