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Volumn 56, Issue 12, 1997, Pages 7384-7388

Negatively charged Si vacancy in SiC: A comparison between theory and experiment

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EID: 0642304912     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.7384     Document Type: Article
Times cited : (201)

References (18)
  • 16
    • 23544444798 scopus 로고
    • Phys. Rev. B 41, 1603 (1990).
    • (1990) Phys. Rev. B , vol.41 , pp. 1603
  • 17
    • 0642297960 scopus 로고
    • F. Beeler and M. Scheffler, in Proceedings of the 15th International Conference of Defects in Semiconductors, edited by G. Ferenczi [Mater. Sci. Forum 38-41, 257 (1989)].
    • (1989) Mater. Sci. Forum , vol.38-41 , pp. 257
    • Beeler, F.1    Scheffler, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.