Atomic structures of 6H-SiC (0001) and (0001̄) surfaces

Surface Science

Volumn 351, Issue 1-3, 1996, Pages 141-148

  Li, L ^a   Tsong, I S T ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Scanning tunneling microscopy; Silicon carbide; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; HYDROGEN; MORPHOLOGY; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SURFACE ROUGHNESS;

SURFACE RECONSTRUCTION; SURFACE RELAXATION; SURFACE TOPOGRAPHY;

SINGLE CRYSTALS;

EID: 0030149836     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01355-5     Document Type: Article

References (16)

1. L. Muehlhoff, W.J. Choyke, M.J. Bozack and J.T. Yates, Jr., J. Appl. Phys. 60 (1986) 2842.
2. R. Kaplan and T.M. Parrill, Surf. Sci. 165 (1986) L45.
3. R. Kaplan, Surf. Sci. 215 (1989) 111.
4. V.M. Bermudez, Appl. Surf. Sci. 84 (1995) 45.
5. K. Miyoshi and D.H. Buckley, Appl. Surf. Sci. 10 (1982) 357.
6. A.J. van Bommel, J.E. Crombeen and A. van Tooren, Surf. Sci. 48 (1975) 463.
7. C.S. Chang, I.S.T. Tsong, Y.C. Wang and R.F. Davis, Surf. Sci. 256 (1991) 354.
8. M.H. Tsai, CS. Chang, J.D. Dow and I.S.T. Tsong, Phys. Rev. B 45 (1992) 1327.
9. K. Nishimori, H. Tokutaka, S. Nakanishi, S. Kishida and N. Ishihara, Jpn. J. Appl. Phys. 28 (1989) L1345.
10. S. Nakanishi, H. Tokutaka, K. Nishimori, S. Kishida and N. Ishihara, Appl. Surf. Sci. 41/42 (1989) 44.
11. F. Owman and P. Mårtensson, Suf. Sci. 330 (1995) L639.
12. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502.
13. M.M. Anikin, A.A. Lebedev, S.N. Pyatko, A.M. Strel'chuk and A.L. Syrkin, Mat. Sci. Eng. B 11 (1992) 113.
14. J. Nogami, S.I. Park and C.F. Quate, J. Vac. Sci. Technol. A 7 (1988) 1919.
15. E. Ganz, I.S. Hwang, F. Xiong, S.K. Theiss and J. Golovchenko, Surf. Sci. 257 (1991) 259.
16. P. Badziag, Surf. Sci. 236 (1990) 48.