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Volumn 446, Issue 1-2, 2000, Pages

Scanning tunneling microscopy investigation of the C-terminated β-SiC(100) c(2 × 2) surface reconstruction: dimer orientation, defects and antiphase boundaries

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPRESSIVE STRESS; CRYSTAL DEFECTS; DIMERS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR ORIENTATION; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; SURFACE STRUCTURE; SURFACE TREATMENT; SYNCHROTRON RADIATION;

EID: 0034140698     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)01067-5     Document Type: Article
Times cited : (53)

References (19)
  • 2
    • 0003343627 scopus 로고
    • Properties of Silicon Carbide
    • G. Harris. London: INSPEC
    • Harris G. Properties of Silicon Carbide. EMIS Datareview Series. vol. 13:1995;INSPEC, London.
    • (1995) EMIS Datareview Series , vol.13
  • 3
    • 0343690508 scopus 로고    scopus 로고
    • Silicon carbide electronic devices and materials. Mater. Res. Soc. Bull. 22:(March):1997.
    • (1997) Mater. Res. Soc. Bull. , vol.22 , Issue.MARCH
  • 5
    • 0343690479 scopus 로고    scopus 로고
    • Surface and interfaces of advances materials
    • Soukiassian P., Semond F. Surface and interfaces of advances materials. J. Physique IV. 7:(C6):1997;101.
    • (1997) J. Physique IV , vol.7 , Issue.C6 , pp. 101
    • Soukiassian, P.1    Semond, F.2
  • 17
    • 0000146350 scopus 로고    scopus 로고
    • and references therein
    • Duke C.B. Chem. Rev. 96:1996;1237. and references therein.
    • (1996) Chem. Rev. , vol.96 , pp. 1237
    • Duke, C.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.