Silicon vacancy in SiC: A high-spin state defect

Applied Physics Letters

Volumn 74, Issue 2, 1999, Pages 221-223

  Torpo, L ^a   Nieminen, R M ^a   Laasonen, K E ^b   Poykko S ^c  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF OULU   (Finland)

^c NEC LABORATORIES AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000785865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123299     Document Type: Article

References (19)

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15. The calculations are performed in a large 128 atom site supercell. For 3C-SiC, the fee basis and for 2H-SiC rectangular superlattice vectors are used. For Brillouin-zone sampling, the Γ point is used.
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