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Volumn 81, Issue 26, 1998, Pages 5868-5871

Carbon atomic chain formation on the β-SiC(100) surface by controlled sp → sp3 transformation

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[No Author keywords available]

Indexed keywords


EID: 4243997516     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.5868     Document Type: Article
Times cited : (80)

References (22)
  • 2
  • 10
    • 0000920530 scopus 로고
    • G. Harris, EMIS Datareview Series, INSPEC, London
    • R. Kaplan and V. M. Bermudez, in Properties of Silicon Carbide, G. Harris, EMIS Datareview Series Vol. 13 (INSPEC, London, 1995), p. 101.
    • (1995) Properties of Silicon Carbide , vol.13 , pp. 101
    • Kaplan, R.1    Bermudez, V.M.2
  • 13
    • 0343690479 scopus 로고    scopus 로고
    • France, and references therein
    • J. Phys. IV (France) P. Soukiassian, F. Semond, 7, 101 (1997), and references therein.
    • (1997) J. Phys. IV , vol.7 , pp. 101
    • Soukiassian, P.1    Semond, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.